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Review of Low Dielectric Constant Thick Film Electronic Ceramics Using Hollow Microspheres

Published online by Cambridge University Press:  15 February 2011

David W. Kellerman*
Affiliation:
Material Solutions by Kellerman Associates, P.O. Box 953, Littleton, MA 01460
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Abstract

High speed interconnects for semiconductor devices require low dielectric constant materials to minimize propagation delays and capacitive line loading. Ceramics and thick film materials have been utilized to package these semiconductor devices, however their dielectric constants are prohibitively high. Hollow microspheres have been added to thick film glass and ceramic composite materials to lower the dielectric constant of those materials. This paper will review papers presented on the work done at Digital Equipment Corporation and EMCA-Remex to develop high speed integrated circuit packages with low dielectric constants.

Presented will be the development and characterization of the low dielectric constant thick film material, processes used to fabricate devices with the low dielectric constant material, and development of the application of the material to an advanced ceramic integrated circuit package.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

1. Kellerman, , “The Development and Characterization of a Low Dielectric Constant Thick Film Material”, Electronic Components Conference Proceedings, 1987, pp. 316–327.Google Scholar
2. Kellerman, : U.S. Patent 4,781,968 and 4,865,875 and 5,178,934 “Microelectronic Devices and Methods of Manufacturing Same”, Digital Equipment CorporationGoogle Scholar
3. Kellerman, : U.S. Patent 4,994,302 “Process for Making Low Dielectric Constant Ceramic Tape”Google Scholar
4. Jung, , Litman, , and Kellerman, , “Development of a Low K Thick Film Dielectric Paste”, ISHM 1989 Proceedings, pp. 590–597.Google Scholar
5. Peluso, and Kellerman, , “The Application of Low Dielectric Constant Thick Film Material on Low Temperature Cofired Glass/Ceramic Material”, ISHM 1990 Proceedings, pp. 345–351.Google Scholar