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Retardation and Enhancement in Lateral Solid Phase Epitaxy of Si on SiO2 by MeV Electron Beam Irradiation

Published online by Cambridge University Press:  25 February 2011

S. Saito ,
H. Okabayashi ,
H. Mori  and
M. Komatsu
S. Saito
Affiliation:
ULSI DEVICE DEVELOPMENT LABORATORIES, Osaka University, 2–1 Yamadaoka Suita, Osaka 565, Japan
H. Okabayashi
Affiliation:
MICROELECTRONICS RESEARCH LABORATORIES, NEC CORPORATION, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan
H. Mori
Affiliation:
RESEARCH CENTER FOR UHVEM, Osaka University, 2–1 Yamadaoka Suita, Osaka 565, Japan
M. Komatsu
Affiliation:
RESEARCH CENTER FOR UHVEM, Osaka University, 2–1 Yamadaoka Suita, Osaka 565, Japan
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Abstract

We have demonstrated the high energy (MeV) electron beam irradiation effects on lateral solid phase epitaxy (L-SPE) of Si-on-insulator (SOI). Thinned samples were set on a hot stage in a 2 MeV electron microscope and L-SPE growth under 2 MeV electron irradiation conditions was monitored in-situ by using the same microscope. L-SPE growth rate for the irradiation dose of 1021 cm−2 was enhanced by about 1.5 times greater than that under unirradiated condition. For electron beam irradiation doses higher than about 1023 cm−2, L-SPE growth was suppressed. Displacement of Si atoms, contamination effect and ionization effect are discussed as causes for the growth rate retardation and enhancement of L-SPE by electron beam irradiation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 319
Copyright
Copyright © Materials Research Society 1993

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References

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