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Resonant excitation of Er3+ by the energy transfer from Si nanocrystals

Published online by Cambridge University Press:  17 March 2011

Kei Watanabe
Affiliation:
Graduate School of Science and Technology, Kobe University, Rokkodai, Nada, Kobe, Japan
Minoru Fujii
Affiliation:
Department of Electrical and Electronics Engineering, Faculty of Engineering, Kobe University, Rokkodai, Nada, Kobe, Japan
Shinji Hayashi
Affiliation:
Graduate School of Science and Technology, Kobe University, Rokkodai, Nada, Kobe, Japan Department of Electrical and Electronics Engineering, Faculty of Engineering, Kobe University, Rokkodai, Nada, Kobe, Japan
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Abstract

Photoluminescence (PL) of SiO2 films co-doped with Si nanocrystals (nc-Si) and Er was studied. The average size of nc-Si was changed in a wide range in order to tune the exciton energy of nc-Si to the energy separations between the discrete electronic states of Er3+. PL from exciton recombination in nc-Si and the intra-4f shell transition of Er3+ were observed simultaneously. At low temperatures, periodic features were observed in the PL spectrum of nc-Si. The period agreed well with the optical phonon energy of Si. The appearance of the phonon structures implies that nc-Si which satisfy the energy conservation rule during the energy transfer process can resonantly excite Er3+. The effects of the quantum confinement of excitons in nc-Si on the energy transfer process are discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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