Hostname: page-component-77c89778f8-m8s7h Total loading time: 0 Render date: 2024-07-16T10:08:29.259Z Has data issue: false hasContentIssue false
  • English
  • Français

Resistivity and Hall Voltage Investigation of Phosphorus Segregation in Polycrystalline Si1-xGex Thin Films

Published online by Cambridge University Press:  17 March 2011

W. Qin ,
D. G. Ast  and
T. I. Kamins
W. Qin
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell UniversityIthaca, NY 14853-1501
D. G. Ast
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell UniversityIthaca, NY 14853-1501
T. I. Kamins
Affiliation:
Hewlett Packard Laboratories, Palo Alto, CA 94304
Get access

Abstract

Dopant segregation in atmospheric-pressure, chemically vapor deposited (APCVD), ~300 nm thick, polycrystalline Si0.95Ge0.5 and Si0.9Ge0.1 thin films, implanted at 80 KeV with 6×1013 to 5×1014 P/cm2 and annealed at 800 °C for 1 hr, was investigated using a combination of Hall and conductivity vs. temperature measurements. Hall measurements, feasible only in heavier doped films, showed that 29% of the phosphorus in Si0.9Ge0.1 and 42% of phosphorus in Si0.95Ge0.05 was electrically inactive. The loss was attributed to dopant segregating to grain boundaries. The density of grain boundaries states was also found to increase slightly with increasing Ge content, from 3.6×1012/cm2 in Si0.95Ge0.05 to 4.4×1012/cm2 in Si0.9Ge0.1.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A8.3
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Wong, C. Y., Grovenor, C. R., Batson, P. E. and Smith, D. A., J. Appl. Phys., 57, 438 (1985)Google Scholar
2. Mandurah, M. M., Saraswat, K. C., Helms, C. R. and Kamins, T. I., J. Appl. Phys., 51, 5755 (1980)Google Scholar
3. Rose, J. H. and Gronsky, R., Appl. Phys. Lett., 41, 993 (1982)Google Scholar
4. Qin, W., Ast, D. G. and Kamins, T. I., to be published in MRS proceedings, volume 557 Google Scholar
5. Kamins, T. I., “Polycrystalline Silicon for Integrated Circuits and Displays”, second edition, Kluwer Academic Publishers (1998), pg. 212 Google Scholar
6. Seto, J. Y. W., J. Appl. Phys., 46, 5247 (1975)Google Scholar
7. Pauw, L. J. van der, Philips Res. Repts., 13:1 (1958)Google Scholar
8. Schroder, D. K., “Semiconductor Materials and Device Characterization”, John Wiley & Sons, Inc., (1990)Google Scholar
9. Singh, J., “Physics of Semiconductors and Their Heterostructures”, McGraw-Hill, Inc., p.190, (1993)Google Scholar
10. Baccarani, G., Riccó, B. and Spadini, G., J. Appl. Phys., 49, 5565 (1978)Google Scholar
11. Edwards, W. J., Ph.D. Dissertation, Cornell University, 1996 Google Scholar
12. Qin, W., Ph.D. Dissertation, Cornell University, 1999 Google Scholar
13. Bang, D. S., Cao, M., Wang, A. and Saraswat, K. C., Appl. Phys. Lett., 66, 195 (1995)Google Scholar
14. Cao, M., King, T. J. and Saraswat, K. C., Appl. Phys. Lett. 61, 672 (1992)Google Scholar
15. Ghosh, A. K., Maruska, A., Feng, H. P. and Eustace, D. J., J. Elec. Mat., 11, 237 (1982)Google Scholar