Multi-layer thin film which has structure of Cu/Cr/K/Cr/Cu prepared by sputtering process was analyzed for interfacial stresses for as-deposited conditions. This structure was also annealed at 150°C, 250°C, and 350°C for around 15 min. in a vacuum and cooled slowly down for stress analyses.

Equations derived by Osgood [1] for residual stress estimations for homogeneous material system using layer removal technique (stress relief) is now applied for inhomogeneous system (multilayer structure). The results are compared with the data obtained from x-ray diffraction technique by using sin2Ψ-2θ method, for Cu layer.

From the present analyses, the data obatined using layer removal seem to be qualitatively consistent with but not quantitatively in agreement with x-ray method. Data obtained using the layer removal method have some overlaps with those obtained from x-ray technique. However, in details, data from the curvature method present different scattering band from the x-ray method. It is suggested that the layer removal method is more practical to be used to estimate the average residual stress of the multi-layer system not only because the layer removal method estimates the bulk behavior but also when the metal film is thin (e.g., 200A for Cr layer), x-ray technique becomes impractical. By annealing the sputtered structure up to 250°C, the residual stresses, in particularly Cu layer, decreased on both sides in x- and y-directions.

From the main results drawn from the present studies, the layer removal sequence for the curvature method shows significant affects on the obtained results of residual stresses. Minimizing influences caused by layer removal sequences as well as removing duration and temperature provides the most accurate results on residual stress measurements.