Hostname: page-component-76fb5796d-skm99 Total loading time: 0 Render date: 2024-04-26T10:03:41.286Z Has data issue: false hasContentIssue false

Reliability of Oxide Thin Film Transistors under the Gate Bias Stress with 400 nm Wavelength Light Illumination

Published online by Cambridge University Press:  27 June 2011

Soo-Yeon Lee
Affiliation:
School of Electrical Engineering and Computer Science, Seoul National University, Seoul, Republic of Korea
Sun-Jae Kim
Affiliation:
School of Electrical Engineering and Computer Science, Seoul National University, Seoul, Republic of Korea
Yongwook Lee
Affiliation:
School of Electrical Engineering and Computer Science, Seoul National University, Seoul, Republic of Korea Samsung Electronics, Yongin-Si, Republic of Korea
Woo-Geun Lee
Affiliation:
Samsung Electronics, Yongin-Si, Republic of Korea
Kap-Soo Yoon
Affiliation:
Samsung Electronics, Yongin-Si, Republic of Korea
Jang-Yeon Kwon
Affiliation:
Department of Materials Science and Engineering, Seoul National University, Seoul, Republic of Korea
Min-Koo Han
Affiliation:
School of Electrical Engineering and Computer Science, Seoul National University, Seoul, Republic of Korea
Get access

Abstract

We have investigated the reliability of the inverted-staggered etch stopper structure oxide-based TFTs under negative gate bias stress combined with 400 nm wavelength light illumination and the relationship between the carrier concentration at the channel and the extent of Vth shift. It was found that the photo-induced holes cause the severe Vth degradation at the beginning of stress and the hole trapping rate of a single hole is not altered with the increase of the hole concentration. In oxide-based TFTs, the hole concentration at the channel is the determinant factor of the reliability.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Nomura, K., Ohta, H., Ueda, K., Kamiya, T., Hirano, M., and Hosono, H., Science, 300, 1269 (2003).10.1126/science.1083212Google Scholar
2. Nomura, K., Ohta, H., Takagi, A., Kamiya, T., Hirano, M., and Hosono, H., Nature (London) 432, 488 (2004).10.1038/nature03090Google Scholar
3. Fortunato, E., Barquinha, P., Pimentel, A., Goncalves, A., Margues, A., Pereira, L., and R. 4. Martins, Adv. Mater. (Weinheim, Ger.), 17, 590 (2005).Google Scholar
4. Yabuta, H., Sano, M., Abe, K., Aiba, T., Den, T., Kumomi, H., Nomura, K., Kamiya, T., and Hosono, H., Appl. Phys. Lett., 89, 112123 (2006).10.1063/1.2353811Google Scholar
5. Suresh, A., Gollakota, P., Wellenius, P., Dhawan, A., and Muth, J. F., Thin Solid Films 516, 1326 (2008).10.1016/j.tsf.2007.03.153Google Scholar
6. Barquinha, P., Pereira, L., Goncalves, G., Martins, R., and Fortunato, E., J. Electrochem. Soc., 156, H161 (2009).10.1149/1.3049819Google Scholar
7. Kwon, J. Y., Son, K. S., Jung, J. S., Kim, T. S., Ryu, M. K., Park, K. B., Yoo, B. W., Kim, J. W., Lee, Y. G., Park, K. C., Lee, S. Y., and Kim, J. M., IEEE Electron Device Lett. 29, 1309 (2008).10.1109/LED.2008.2006637Google Scholar
8. Park, J. S., Kim, T. S., Son, S., Jung, J. S., Lee, K.-H., Kwon, J.-Y., Koo, B., and Lee, S., IEEE Electron Device Lett. 31, 440 (2010).10.1109/LED.2010.2043050Google Scholar
9. Lee, K.-H., Jung, J. S., Son, K. S., Park, J. S., Kim, T. S., Choi, R., Jeong, J. K., Kwon, J.-Y., Koo, B., and Lee, S., Appl. Phys. Lett. 95, 232106 (2009).10.1063/1.3272015Google Scholar
10. Suresh, A., and Muth, J. F., Appl. Phys. Lett. 92, 033502 (2008).10.1063/1.2824758Google Scholar
11. Hoshino, K., Hong, D., Chiang, H. Q., and Wager, J. F., IEEE Trans. Electron Devices, 56, 1365 (2009).10.1109/TED.2009.2021339Google Scholar
12. Lopes, M. E., Gomes, H. L, Medeiros, M. C. R., Barquinha, P., Pereira, L., Appl. Phys. Lett. 95, 063502 (2009).10.1063/1.3187532Google Scholar
13. Powell, M. J., Appl. Phys. Lett. 43, 597 (1983).10.1063/1.94399Google Scholar
14. Ferris-Prabhu, A. V., IEEE Trans. Electron Devices ED-24, 524 (1977).10.1109/T-ED.1977.18772Google Scholar
15. Grove, A. S., Physics and Technology of Semiconductor Devices (John Wiley and Sons, 1967) p. 128.Google Scholar