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Relationship Between Crystal Defects, Ge Outdiffusion and V/III Ratio in MOVPE Grown (001) GaAs/Ge

Published online by Cambridge University Press:  21 February 2011

C. Frigeri ,
G. Atrolini ,
C. Pelosi  and
F. Longo
C. Frigeri
Affiliation:
CNR-MASPEC Institute, via Chiavari 18/A - 43100 Parma, Italy
G. Atrolini
Affiliation:
CNR-MASPEC Institute, via Chiavari 18/A - 43100 Parma, Italy
C. Pelosi
Affiliation:
CNR-MASPEC Institute, via Chiavari 18/A - 43100 Parma, Italy
F. Longo
Affiliation:
CNR-MASPEC Institute, via Chiavari 18/A - 43100 Parma, Italy
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Abstract

Two regimes of defect generation have been found in MOVPE GaAs/Ge layers upon changing the V/III ratio between 1.3 and 11.8. For low V/III ratio the layers contained misfit dislocations along with stacking faults that had been generated by dissociation of the misfit dislocations. The stacking fault density increased with decreasing V/III ratio. This might be explained by an enhanced mobility of the dissociated partials due the reduced unintentional doping of the layer caused by reduced Ge outdiffusion from the substrate when V/III is small. The secon regime corresponds to high V/III ratios and is characterized by the absence of misfit dislocations and the presence of a high density of planar defects. This means that breakdown of the 2D layer-by-layer growth occurred and 3D island growth prevailed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 319: Symposia CB – Defect-Interface Interactions , 1993 , 135
Copyright
Copyright © Materials Research Society 1994

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References

1. Matthews, J. W., Epitaxial Growth part B edited by Matthews, J. W. (Academic Press, New York, 1975), p. 560.Google Scholar
2. Fitzgerald, E. A., Mat. Sci. Rep. 7, 87 (1991).Google Scholar
3. Frank, F. C. and Merwe, J. H. van der, Proc. R. Soc. A 198, 216 (1949).Google Scholar
4. Kroemer, H., J. Crystal Growth 81, 193 (1987).CrossRefGoogle Scholar
5. Ernst, F. and Pirouz, P., J. Mater. Res. 4, 83 (1989).Google Scholar
6. Batstone, J. L., Steeds, J. W., and Wright, P. J., Phil. Mag. A, 66, 609 (1992).CrossRefGoogle Scholar
7. Tafto, J. and Spence, J. C. H., J. Appl. Cryst. 15, 60 (1982).Google Scholar
8. Hirsch, P., Howie, A., Nicholson, R. B., Pashley, D. W., and Whelan, M. J., Electron Microscopy of Thin Crystals 2nd ed. (R. E. Krieger Pu. Co., Malabar, 1977).Google Scholar
9. DeCooman, B. and Carter, B. C., Inst. Phys. Conf. Ser. 87, 259 (1987).Google Scholar
10. Boivin, P., Rabier, J., and Garem, H., Phil. Mag. A, 61, 619 (1990).Google Scholar
11. Lefebvre, A., Androussi, Y., and Vanderschaeve, G., Phil. Mag. Lett. 56, 135 (1987).Google Scholar
12. Cherns, D., Chu, C T., Steeds, J. W., Ashenford, D. A., and Lunn, B., Phil. Mag. Lett. 67, 323 (1993).Google Scholar
13. Yonenaga, I. and Sumino, K., J. Appl. Phys. 65, 85 (1989).Google Scholar
14. Yonenaga, I. and Sumino, K., J. Crystal Growth 126, 19 (1993).Google Scholar
15. Sarma, K., Dalby, R., Rose, K., Aina, O., Katz, W., and Lewis, N., J. Appl. Phys., 58, 2703 (1984).Google Scholar
16. Pashley, D.W., Mat. Res. Soc. Proc. (Pittsburgh, PA), 37, 67 (1985).Google Scholar