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Relation between Growth Precursors and Film Properties for Plasma Deposition of a-Si:H at Rates up to 100 Å/s

Published online by Cambridge University Press:  17 March 2011

W.M.M. Kessels ,
A.H.M. Smets ,
J.P.M. Hoefnagels ,
M.G.H. Boogaarts ,
D.C. Schram  and
M.C.M. van de Sanden
W.M.M. Kessels
Affiliation:
Dept. of Applied Physics, Center for Plasma Physics and Radiation Technology, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
A.H.M. Smets
Affiliation:
Dept. of Applied Physics, Center for Plasma Physics and Radiation Technology, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
J.P.M. Hoefnagels
Affiliation:
Dept. of Applied Physics, Center for Plasma Physics and Radiation Technology, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
M.G.H. Boogaarts
Affiliation:
Dept. of Applied Physics, Center for Plasma Physics and Radiation Technology, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
D.C. Schram
Affiliation:
Dept. of Applied Physics, Center for Plasma Physics and Radiation Technology, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
M.C.M. van de Sanden
Affiliation:
Dept. of Applied Physics, Center for Plasma Physics and Radiation Technology, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
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Abstract

From investigations on the SiH3 and SiH radical density and the surface reaction probability in a remote Ar-H2-SiH4 plasma, it is unambiguously demonstrated that the a-Si:H film quality improves significantly with increasing contribution of SiH3 and decreasing contribution of very reactive (poly)silane radicals. Device quality a-Si:H is obtained at deposition rates up to 100 Å/s for conditions where film growth is governed by SiH3 (contribution ∼90%) and where SiH has only a minor contribution (∼2%). Furthermore, for SiH3 dominated film growth the effect of the deposition rate on the a-Si:H film properties with respect to the substrate temperature is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A4.2
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1 Kessels, W.M.M., Smets, A.H.M., Korevaar, B.A., Adriaenssens, G.J., Sanden, M.C.M. van de, and Schram, D.C., Mater. Res. Soc. Symp. Proc. 557, 25 (1999).Google Scholar
2 Korevaar, B.A., Adriaenssens, G.J., Smets, A.H.M., Kessels, W.M.M., Song, H.-Z., Sanden, M.C.M. van de, and Schram, D.C., J. Non-Cryst. Solids. 266, 380 (2000).Google Scholar
3 Kessels, W.M.M., Leewis, C.M., Sanden, M.C.M. van de, and Schram, D.C., J. Appl. Phys. 86, 4029 (1999).Google Scholar
4 O'Keefe, A. and Deacon, D.A.G., Rev. Sci. Instrum. 59, 2544 (1988); Cavity Ring down Spectroscopy- a new technique for trace absorption measurements, eds. K.W. Busch and M.A. Busch (American Chemical Society, Washington, 1998).Google Scholar
5 Doughty, D.A., Doyle, J.R., Lin, G.H., and Gallagher, A., J. Appl. Phys. 67, 6220 (1990).Google Scholar
6 Kessels, W.M.M., Sanden, M.C.M. van de, Severens, R.J., and Schram, D.C., J. Appl. Phys. 87, 3313 (2000).Google Scholar
7 Lightfoot, P.D., Becerra, R., Jemi-Alade, A.A., and Lesclaux, R., Chem. Phys. Lett. 180, 441 (1991).Google Scholar
8 Luque, J. and Crosley, D.R., Lifbase: Database and Spectral Simulation Program (Version 1.5), SRI international report MP 99-009 (1999).Google Scholar
9 Perrin, J., Leroy, O., and Bordage, M.C., Contrib. Plasma Phys. 36, 1 (1996).Google Scholar
10 Smets, A.H.M., Schram, D.C., and Sanden, M.C.M. van de, Mater. Res. Soc. Symp. Proc. 609 (2000).Google Scholar
11 Kessels, W.M.M., Severens, R.J., Sanden, M.C.M. van de, and Schram, D.C., J. Non-Cryst. Solids 227–230, 133 (1998).Google Scholar
12 Street, R.A., Phys. Rev. B 43, 2454 (1991).Google Scholar
13 Robertson, J., J. Appl. Phys. 87, 2608 (2000).Google Scholar