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Refractory Ohmic Contacts Formed by Electroless Deposition of Palladium and Nickel Onto N-InP

Published online by Cambridge University Press:  25 February 2011

G. Stremsdoerfer ,
Y. Wang ,
J. R. Martin  and
E. Souteyrand
G. Stremsdoerfer
Affiliation:
Ecole Centrale de Lyon - Laboratoire, Physicochimie des Interfaces, B.P. 163 69131 ECULLY CEDEX, FRANCE
Y. Wang
Affiliation:
Ecole Centrale de Lyon - Laboratoire, Physicochimie des Interfaces, B.P. 163 69131 ECULLY CEDEX, FRANCE
J. R. Martin
Affiliation:
Ecole Centrale de Lyon - Laboratoire, Physicochimie des Interfaces, B.P. 163 69131 ECULLY CEDEX, FRANCE
E. Souteyrand
Affiliation:
Ecole Centrale de Lyon - Laboratoire, Physicochimie des Interfaces, B.P. 163 69131 ECULLY CEDEX, FRANCE
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Abstract

Ni and Pd layers have been elaborated from chemical process on (100) oriented and 1018 doped n-InP substrates. The electrical and structural characteristics of these contacts have been investigated. Good refractory ohmic contacts were obtained by the annealing of these heterostructures. The ohmic quality of chemical contacts as well as those obtained with evaporated contacts is attributed to both the presence of crystallized compounds (NiP; Ni2P; PdIn3 and Pdln) and to superficial degenerescence of InP due to a phosphorus excess laying in the interphase.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 543
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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