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Refractory Metal Contacts to N-Type InP and InGaAs

Published online by Cambridge University Press:  21 February 2011

K.C. Song ,
D.V. Stevanovic ,
D.A. Thompson  and
J.G. Simmons
K.C. Song
Affiliation:
Centre For Electrophotonic Materials And Devices, Mcmaster University, Hamilton On L8S 4L7 Canada
D.V. Stevanovic
Affiliation:
Centre For Electrophotonic Materials And Devices, Mcmaster University, Hamilton On L8S 4L7 Canada
D.A. Thompson
Affiliation:
Centre For Electrophotonic Materials And Devices, Mcmaster University, Hamilton On L8S 4L7 Canada
J.G. Simmons
Affiliation:
Centre For Electrophotonic Materials And Devices, Mcmaster University, Hamilton On L8S 4L7 Canada
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Abstract

W/Ti refractory metal ohmic contacts to n-type InP and InGaAs have been fabricated by electron-beam evaporation in an ultra-high vacuum metallization system. Excellent surface morphology was observed and good pattern transfer of the metal films was achieved with chemical etching. Ideal ohmic behavior was obtained for samples which were heavily doped either during MBE growth or via ion implantation. The lowest specific contact resistances obtained were: 4.8xl0-7Ωcm2 for ion implanted n+InP and 4.9xl0-6 Ωcm2 for n+InGaAs. The thermal and metallurgical stability of the contacts has been investigated using scanning electron microscopy and Auger electron spectroscopy with sputter depth profiling. The contact samples were subjected to heat treatments using rapid thermal annealing at temperatures of 350 to 800°C. Scanning electron microscopy showed that after annealing at up to 600°C no degradation in surface morphology had occurred. Auger depth profiling indicated that the W-film maintained a sharp interface for all heating treatments, with no degradation up to 600°C. However, some P and In was found at the surface of the contact layer after annealing at 800°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 233
Copyright
Copyright © Materials Research Society 1994

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