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Reduction of the Damage Induced in an Fib-Fabricated X-Tem Specimen

Published online by Cambridge University Press:  10 February 2011

N. I. Kato ,
K. Tsujimoto  and
N. Miura
N. I. Kato
Affiliation:
Reliability and Material Engineering, ITES, IBM Japan, 800, Ichimiyake, Yasu-cho, Yasu-gun, Shiga-ken 520-2392, Japan, naokoik@jp.ibm.com
K. Tsujimoto
Affiliation:
LCD Analysis Engineering, IBM Japan, 1623-14, Shimotsuruma, Yamato-shi, Kanagawa-ken, 242-8502, Japan
N. Miura
Affiliation:
Reliability and Material Engineering, ITES, IBM Japan, 800, Ichimiyake, Yasu-cho, Yasu-gun, Shiga-ken 520-2392, Japan, naokoik@jp.ibm.com
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Abstract

In focused ion beam (FIB) fabrication of cross-sectional transmission electron microscopy (X-TEM) specimens, highly accelerated ion beams sometimes cause serious damage. The damage can be induced in both the specimen surface and in the side walls. We used X-TEM observations to investigate the side-wall damage induced by FIB fabrication in crystalline silicon. The damaged layer was found to be about 20 nm thick in the case of 30-keV FIB etching. We tried to reduce the damage by several methods, such as gas-assisted etching (GAE) with iodine, broad argon ion milling and wet etching. The damaged layer was 19 nm for GAE and 12 nm for argon ion milling with a beam current of 70 mA and the tilt angle between the beam and the specimen of 15 degrees. Wet etching using a mixture of nitric and hydrofluoric acid removes most of the damaged layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 523: Symposium U – Electron Microscopy of Semiconducting Materials & ULSI Devices , 1998 , 39
Copyright
Copyright © Materials Research Society 1998

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