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Reduction of Defect Levels in Si and Si/Ce Layers Grown by MBE

Published online by Cambridge University Press:  26 February 2011

C.J. Gibbings  and
D C.G. Tuppen
C.J. Gibbings
Affiliation:
British Telecom Research Laboratories, Martlesham Heath, Ipswich, IP5 7RE, United Kingdom.
D C.G. Tuppen
Affiliation:
British Telecom Research Laboratories, Martlesham Heath, Ipswich, IP5 7RE, United Kingdom.
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Abstract

The dislocation density in undoped Si-MBE layers grown on wafers without any chemical pre-cleaning has been studied. The oxide layer was removed using a low silicon flux. Factors influencing the dislocation density have been studied, including substrate type, growth temperature and the temperature at which oxide is removed. Dislocation densities below 10-3 cm-2 have been obtained. The defect density in p-type silicon doped with boron oxide has also been studied. The influence of boron oxide on dislocation density has been found to be negligible, even though incorporation of oxygen is large at growth temperatures ≤650°C. Boron oxide doped Si.88Ge.12 layers have also been grown and a similar level of dislocations has been found.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 311
Copyright
Copyright © Materials Research Society 1988

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References

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