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Reduced Mobility and PPC in In.20Ga.80As/Al.23Ga.77 as Hemt Structure

Published online by Cambridge University Press:  26 February 2011

S. E. Schacham ,
R. A. Mena ,
E. J. Haugland  and
S. A. Alterovitz
S. E. Schacham
Affiliation:
NASA Lewis Research Center
R. A. Mena
Affiliation:
NASA Lewis Research Center
E. J. Haugland
Affiliation:
NASA Lewis Research Center
S. A. Alterovitz
Affiliation:
NASA Lewis Research Center
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Abstract

Transport properties of a pseudomorphic In .20Ga.80As/Al.23Ga.77As HEMT structure have been measured by Hall and SdH techniques. Two samples of identical structures but different doping levels were compared. Low temperature mobility measurements as a function of concentration shows a sharp peak at a Hall concentration of 1.9.1012/cm2. This concentration coincides with the onset of second subband occupancy, indicating that the decrease in mobility is due to intersubband scattering. In spite of the low Al content (23%) large PPC was observed in the highly doped sample only, showing a direct correlation between the PPC and doping concentration of the barrier layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 571
Copyright
Copyright © Materials Research Society 1992

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References

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