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Redistribution of Dopant and Impurity Concentrations During the Formation of Uniform Wsi2 Films by RTP

Published online by Cambridge University Press:  26 February 2011

Michael P. Siegal  and
Jorge J. Santiago
Michael P. Siegal
Affiliation:
Laboratory for the Research of Structure and Matter, University of Pennsylvania, Philadelphia, Pennsylvania 19104. Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104.
Jorge J. Santiago
Affiliation:
Laboratory for the Research of Structure and Matter, University of Pennsylvania, Philadelphia, Pennsylvania 19104. Moore School of Electrical Engineering, Center for Sensors Technology, University of Pennsylvania, Philadelphia, Pennsylvania 19104.
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Abstract

Secondary ion mass spectroscopy has been used to study the effects of rapid thermal processing on the formation of tetragonal tungsten disilicide thin films on Si(100), p-type 5 Omaga;, cm wafers. The substrates were chemically etched, followed by an RF sputter depostion of 710Å W metal. The samples were then fast radiatively processed in an RTP system for time intervals ranging from 15 to 45 seconds at high temperature (∼1100°C) under high vacuum.

The redistribution of the boron dopant concentration profile is studied and shows that boron moves from the Si-substrate into the growing Wsi2 film, eventually escaping into the vacuum. Oxygen is the major impurity in these samples and its removal from the interface has been shown to improve the quality of the silicide film. Trace quantities of F, Cl, Na, K, C and Cr have also been detected.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 701
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1. Murarka, S.P., Silicides for VLSI Applications, (Academic Press, New York, 1983).Google Scholar
2. Tsai, M.Y., Chao, H.H., Ephrath, L.M., Crowder, B.L., Cramer, A., Bennett, R.S., Lucchese, C.J. and Wordeman, M.R., J. Electrochem. Soc., 128(10), 2207 (1981).CrossRefGoogle Scholar
3. Cooper, C.B. III, Powell, R.A. and Chow, R., J. Vac. Sci. Technol., B2(4), 718 (1984).CrossRefGoogle Scholar
4. Tsai, M.Y., d'Heurle, F.M., Petersson, C.S. and Johnson, R.W., J. Appl. Phys., 52(8), 5350 (1981).CrossRefGoogle Scholar
5. Pan, P., Hsieh, N., Geipel, H.J., Jr. and Slusser, G.J., J. Appl. Phys., 53(4), 3059 (1982).CrossRefGoogle Scholar
6. Jahnel, F., Biersack, J., Crowder, B.L., d'Heurle, F.M., Fink, D., Isaac, R.D., Lucchese, C.J. and Petersson, C.S., J. Appl. Phys. 53(11), 7372 (1982).CrossRefGoogle Scholar
7. Siegal, M.P. and Santiago, J.J., J. Appl. Phys., to be published.Google Scholar
8. Siegal, M., Santiago, J., Spiegel, J.Van der J, Graham, W.R. and Setton, M., in “Beam-Solid Interactions and Transient Processes”, eds. Thompson, M.O., Picraux, S.T. and Williams, J.S., Proc. of Mat. Res. Soc., 74, 673 (1987).CrossRefGoogle Scholar
9. Zirinsky, S., Hammer, W., d'Heurle, F. and Baglin, J., Appl. Phys. Lett., 33(1), 76 (1978).CrossRefGoogle Scholar
10. Baglin, J.E.E., d'Heurle, F.M. and Petersson, C.S., J. Appl. Phys., 54(4), 1849 (1983).CrossRefGoogle Scholar
11. Silversmith, D.J., Rathman, D.D. and Mountain, R.W., Thin Solid Films, 93, 413 (1982).CrossRefGoogle Scholar
12. Bomchil, G., Goeltz, G. and Tortes, J., Thin Solid Films, 140, 59 (1986).CrossRefGoogle Scholar
13. Bartur, M. and Nicolet, M-A., J. Electrochem. Sot., 131(2), 371 (1984).CrossRefGoogle Scholar
14. Beyers, R., J. Appl. Phys., 56(1), 147 (1984).CrossRefGoogle Scholar
15. Davis, G.D. and Natan, M., J. Vac. Sci. Technol., A 4(2), 159 (1986).CrossRefGoogle Scholar
16. Fukumoto, M. and Ohzone, T., Appl. Phys. Lett., 50(14),894 (1987).CrossRefGoogle Scholar
17. Liang, S.C., J. Vac. Sci. Technol., B2(4), 714 (1984).CrossRefGoogle Scholar
18. General Chemical Corp., Parsippany, N.J. 07054.Google Scholar