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Recovery Process of Light-Induced Spins in Hydrogenated Amorphous Silicon-Nitrogen Alloy Films

Published online by Cambridge University Press:  15 February 2011

Jinyan Zhang ,
Qing Zhang ,
Minoru Kumeda  and
Tatsuo Shimizu
Jinyan Zhang
Affiliation:
Faculty of Engineering, Kanazawa University, Kanazawa 920, Japan
Qing Zhang
Affiliation:
Faculty of Engineering, Kanazawa University, Kanazawa 920, Japan
Minoru Kumeda
Affiliation:
Faculty of Engineering, Kanazawa University, Kanazawa 920, Japan
Tatsuo Shimizu
Affiliation:
Faculty of Engineering, Kanazawa University, Kanazawa 920, Japan
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Abstract

The influences of sub-gap illumination and thermal annealing on the light-induced neutral dangling bonds (DB's) created in the fast process (FDB's) and those created in the slow process (SDB's) are prominently different in Si-rich a-Si1-xNx:H. The results of photobleaching show that the sub-gap illumination annihilates FDB's, more effectively at 77 K, whereas it appears not to affect SDB's, suggesting that FDB's are produced by a carrier capture at preexisting charged DB's. The annealing behaviors for both FDB's and SDB's are in agreement with the monomolecular kinetics. The attempt-to-anneal frequency, ν0, is ∼ 103 Hz for FDB's and ∼ 107 Hz for SDB's. Annealing-time dependence of the density of light-induced spins at various annealing temperatures can be fit with a distribution of annealing activation energies. In addition, clearly separated peaks of the distribution of annealing activation energies related to FDB's and SDB's are observed. A comparison indicates that SDB's have a nature similar to the light-induced metastable spins in a-Si:H, which are likely to be produced by a creation of new defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 367
Copyright
Copyright © Materials Research Society 1995

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References

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