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Recombination Lifetimes in a-Si:H/a-SiC:H Multilayers

Published online by Cambridge University Press:  21 February 2011

T. Muschik ,
T. Fischer  and
R. Schwarz
T. Muschik
Affiliation:
Technische Universität München, Physikdepartment E16, James-Franck-Str., W-8046 Garching, Germany
T. Fischer
Affiliation:
Technische Universität München, Physikdepartment E16, James-Franck-Str., W-8046 Garching, Germany
R. Schwarz
Affiliation:
Technische Universität München, Physikdepartment E16, James-Franck-Str., W-8046 Garching, Germany
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Abstract

The recombination processes in a-Si:H and a-Si:H/a-SiCo.3s:H multilayers at T=10 K are studied by transient photoluminescence on a time scale from 2 ns to 100 ms. Our investigations yield a lifetime distribution with two peaks at ∼1 ms and ∼1 /μS for bulk a-Si:H. We present measurements on samples with varying defect density ND. It is shown that there is no significant shift of the two lifetimes as a function of ND. However, the relative contribution of the μs-peak is enhanced with increasing ND. In a-Si:H/a-SiC:H multilayers with a varying number of interfaces and well layer thicknesses dsi there is also no discernible change of the lifetimes as a function of the overall defect density. An additional peak at ∼20 ns is observed for samples with dsi smaller than ∼30 Å. It may be attributed to recombination in the interface layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 565
Copyright
Copyright © Materials Research Society 1992

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References

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