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Reciprocal Space Mapping of X-Ray Diffraction Intensity of GaN-Based Laser Diodes Grown on GaN Substrates

Published online by Cambridge University Press:  01 February 2011

K. Tachibana ,
Y. Harada ,
S. Saito ,
S. Nunoue ,
H. Katsuno ,
C. Hongo ,
G. Hatakoshi  and
M. Onomura
K. Tachibana
Affiliation:
Corporate Research and Development Center, Toshiba Corporation, 1, Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212–8582, Japan
Y. Harada
Affiliation:
Corporate Research and Development Center, Toshiba Corporation, 1, Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212–8582, Japan
S. Saito
Affiliation:
Corporate Research and Development Center, Toshiba Corporation, 1, Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212–8582, Japan
S. Nunoue
Affiliation:
Corporate Research and Development Center, Toshiba Corporation, 1, Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212–8582, Japan
H. Katsuno
Affiliation:
Corporate Research and Development Center, Toshiba Corporation, 1, Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212–8582, Japan
C. Hongo
Affiliation:
Corporate Research and Development Center, Toshiba Corporation, 1, Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212–8582, Japan
G. Hatakoshi
Affiliation:
Toshiba Research Consulting Corporation, 1, Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212–8582, Japan
M. Onomura
Affiliation:
Corporate Research and Development Center, Toshiba Corporation, 1, Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212–8582, Japan
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Abstract

Characterization by reciprocal space mapping of x-ray diffraction (XRD) intensity was carried out for epitaxial layers of GaN-based laser structures on two GaN substrates: GaN substrate and GaN template on sapphire substrate. The difference between these two substrates was shown clearly. The distribution of XRD intensity of the epitaxial layers on GaN substrate was smaller than that of the epitaxial layers on GaN template on sapphire substrate. In the lasers with the epitaxial structure on GaN substrate, the light output power was as high as 200 mW under continuous-wave operation at room temperature. Excellent noise characteristics with relative intensity noise of -132 dB/Hz were also obtained at a low light output power of 3 mW without any high-frequency modulation. These results support that GaN substrates are promising for realizing GaN-based lasers with high performance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y5.40
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

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