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Recent Progress in The Omvpe Growth of HgCdTe

Published online by Cambridge University Press:  21 February 2011

Sorab K. Ghandhi
Sorab K. Ghandhi*
Affiliation:
Electrical, Computer and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180
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Abstract

The last two years has seen rapid development in the growth of mercury cadmium telluride material for use in far infrared detectors. This paper will briefly review the progress before this period, and will focus on recent developments in these materials.

The emphasis will be on the direct alloy growth of HgCdTe material by organometallic vapor phase epitaxy (OMVPE).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 161: Symposium E – Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems , 1989 , 331
Copyright
Copyright © Materials Research Society 1990

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References

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