Recent Progress in SiC Microwave MESFETs

S. T. Allen; S. T. Sheppard; W. L. Pribble; R. A. Sadler; T. S. Alcorn; Z. Ring; J. W. Palmour

doi:10.1557/PROC-572-15

Abstract

SiC MESFET's have shown an RF power density of 4.6 W/mm at 3.5 GHz and a power added efficiency of 60% with 3 W/mm at 800 MHz, demonstrating that SiC devices are capable of very high power densities and high efficiencies. Single devices with 48 mm of gate periphery were mounted in a hybrid circuit and achieved a maximum RF power of 80 watts CW at 3.1 GHz with 38% PAE.

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Recent Progress in SiC Microwave MESFETs

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Recent Progress in SiC Microwave MESFETs

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