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Recent Progress in Microcrystalline Semiconductor Thin Films

Published online by Cambridge University Press:  15 February 2011

K. Tanaka
K. Tanaka*
Affiliation:
Joint Research Center for Atom Technology (JRCAT), National Institute for Advanced Interdisciplinary Research, 1–1–4 Higashi, Tsukuba, Ibaraki 305, tanaka@jrcat.or.jp
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Abstract

Nanocrystalline/microcrystalline thin films prepared at relatively low temperatures by plasma-enhanced chemical vapor deposition (PECVD), in particular hydrogenated microcrystalline Si films (μc-Si:H), have attracted an increasing attention not only as potential materials for thin film solar cells, but also as active layers in thin film transistor arrays for flat panel displays. This paper reviews recent progress in the investigation of these materials; preparation methods, structural and optical properties, and electronic transports. Emphasis is placed on the understanding of the growth mechanism of μc-Si:H films as well as the microscopic characterization of the film structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 3
Copyright
Copyright © Materials Research Society 1997

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References

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