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Recent Progress in Crystal Growth and Conductivity Control of Wide Bandgap Group III Nitride Semiconductors
Published online by Cambridge University Press: 10 February 2011
Abstract
Recent progress in crystal growth of wide bandgap group III nitrides on highly-mismatched substrates has enabled us to produce high-quality GaN, A1GaN, GaInN and quantum well structures. High-performance blue and green light-emitting diodes and room temperature operation of nitride-based laser diodes have also been realized. Today, steady progress is being made in the areas of crystal growth and device performance. However, much further advances are required in many areas of materials science and device fabrication of the nitrides
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- Copyright © Materials Research Society 1998
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