Hostname: page-component-76fb5796d-zzh7m Total loading time: 0 Render date: 2024-04-27T00:58:16.865Z Has data issue: false hasContentIssue false
  • English
  • Français

Recent Progress in Crystal Growth and Conductivity Control of Wide Bandgap Group III Nitride Semiconductors

Published online by Cambridge University Press:  10 February 2011

I. Akasaki
I. Akasaki*
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogama-guchi, Tempaku-ku, Nagoya 468-8502, Japan
Get access

Abstract

Recent progress in crystal growth of wide bandgap group III nitrides on highly-mismatched substrates has enabled us to produce high-quality GaN, A1GaN, GaInN and quantum well structures. High-performance blue and green light-emitting diodes and room temperature operation of nitride-based laser diodes have also been realized. Today, steady progress is being made in the areas of crystal growth and device performance. However, much further advances are required in many areas of materials science and device fabrication of the nitrides

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 145
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Amano, H., Sawaki, N., Akasaki, I. and Toyoda, Y., Appl. Phys. Lett. 48, 353 (1986).Google Scholar
[2] Nakamura, S., Jpn. J. Appl. Phys. 30, L1705 (1991).Google Scholar
[3] Koide, Y., Itoh, H., Sawaki, N. and Akasaki, I., J. Electrochem. Soc. 133, 1956 (1986).Google Scholar
[4] Yoshimoto, N., Matsuoka, T., Sasaki, T. and Katsui, A., Appl. Phys. Lett. 59, 2251 (1991).Google Scholar
[5] Nakamura, S. and Mukai, T., Jpn. J. Appl. Phys. 31, L1457 (1992).Google Scholar
[6] Itoh, K., Kawamoto, T., Amano, H., Hiramatsu, K. and Akasaki, I., Jpn. J. Appl. Phys. 30, 1924 (1991).Google Scholar
[7] Nakamura, S., Senoh, M. and Mukai, T., Jpn. J. Appl. Phys. 32, L8 (1993).Google Scholar
[8] Amano, H. and Akasaki, I., Mat. Res. Soc. Ext. Abs. EA-21, 165 (1990).Google Scholar
[9] Amano, H., Kito, M., Hiramatsu, K. and Akasaki, I., Jpn. J. Appl. Phys. 28, L2112 (1989).Google Scholar
[10] Nakamura, S., Senoh, M. and Mukai, T., Jpn. J. Appl. Phys. 30, L1708 (1991).Google Scholar
[11] Nakamura, S., Mukai, T. and Senoh, M., Appl. Phys. Lett. 64, 1687(1994).Google Scholar
[12] Akasaki, I., Amano, H., Itoh, K., Koide, N. and Manabe, K., Inst. Phys. Conf. Ser. 129, 851 (1992).Google Scholar
[13] Nakamura, S., Senoh, M., Iwasa, N. and Nagahama, S., Jpn. J. Appl. Phys. 34, L797 (1995).Google Scholar
[14] Koide, M., Shibata, N., Kato, H., Yamasaki, S., Koide, N., Amano, H. and Akasaki, I., Proc. 1995 Mat. Res. Soc. Symp. 395, 889(1995).Google Scholar
[15] Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H. and Sugimoto, Y., Jpn. J. Appl. Phys. 35, L74 (1996).Google Scholar
[16] Akasaki, I., Sota, S., Sakai, H., Tanaka, T., Koide, M. and Amano, H., Electron. Lett. 32, 1105 (1996).Google Scholar
[17] Akasaki, I., Amano, H., Koide, Y., Hiramatsu, K. and Sawaki, N., J. Crystal Growth 98, 209 (1989).Google Scholar
[18] Hiramatsu, K., Itoh, S., Amano, H., Akasaki, I., Kuwano, N., Shiraishi, T. and Oki, K., J. Crystal Growth 115, 628 (1991).Google Scholar
[19] Akasaki, I. and Amano, H., J. Crystal Growth 175/176, 29 (1997).Google Scholar
[20] Akasaki, I. and Amano, H., Proc. Intl. Symp. on Blue Laser and LED, Tu-02 (1996).Google Scholar
[21] Sayyah, K., Chung, B. C. and Gershenzon, M., J. Crystal Growth 77, 424 (1986).Google Scholar
[22] Murakami, H., Asahi, T., Amano, H., Hiramatsu, K., Sawaki, N. and Akasaki, I., J. Crystal Growth 115, 648 (1991).Google Scholar
[23] Amano, H., Kitoh, M., Hiramatsu, K. and Akasaki, I., J. Electrochem. Soc. 137, 1639 (1990).Google Scholar
[24] Akasaki, I. and Amano, H., Mat. Res. Soc. Symp. Proc. 242, 383 (1992).Google Scholar
[25] Nakamura, S., Iwasa, N., Senoh, M. and Mukai, T., Jpn. J. Appl. Phys. 31, 1258 (1992).Google Scholar
[26] Dingle, R., Shaklee, K. L., Leheny, R. F. and Zetterstorm, R. B., Appl. Phys. Lett. 19, 5 (1971).Google Scholar
[27] Amano, H., Asahi, T. and Akasaki, I., Jpn. J. Appl. Phys. 29, L205 (1990).Google Scholar
[28] Akasaki, I., Amano, H., Sota, S., Sakai, H., Tanaka, T. and Koike, M., Jpn. J. Appl. Phys. 34, L1517 (1995).Google Scholar
[29] Nakamura, S., Proc. 1997 Mat. Res. Soc. Fall Meeting, “in press”Google Scholar
[30] Burm, J., Schaff, W. J., Eastman, L. F., Amano, H. and Akasaki, I., Appl. Phys. Lett. 68, 2849 (1996).Google Scholar