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Real-Time Feedback Control of Thermal CL2 Etching of GaAs Based on In-Situ Spectroscopic Ellipsometry

Published online by Cambridge University Press:  10 February 2011

T. Parent ,
R. Heitz ,
P. Chen  and
A. Madhukar
T. Parent
Affiliation:
Center for Intelligent Manufacturing of Semiconductors (CIMOS), Materials Science & Engineering Department, University of Southern California, Los Angeles, CA 90089, parent@scf.usc.edu
R. Heitz
Affiliation:
Center for Intelligent Manufacturing of Semiconductors (CIMOS), Materials Science & Engineering Department, University of Southern California, Los Angeles, CA 90089, parent@scf.usc.edu
P. Chen
Affiliation:
Center for Intelligent Manufacturing of Semiconductors (CIMOS), Materials Science & Engineering Department, University of Southern California, Los Angeles, CA 90089, parent@scf.usc.edu
A. Madhukar
Affiliation:
Center for Intelligent Manufacturing of Semiconductors (CIMOS), Materials Science & Engineering Department, University of Southern California, Los Angeles, CA 90089, parent@scf.usc.edu
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Abstract

In-situ, real-time, spectroscopic ellipsometry (SE) is utilized to study thermal chlorine etching of GaAs in an all ultra-high-vacuum interconnected growth and etching system. In the low temperature (between ˜40°C and ˜120°C) range, the etch rate is found to exhibit an Arrhenius dependence on substrate temperature with an activation energy of 11.6Kcal/mole and to be proportional to essentially the square root of the chlorine pressure. An SE feedback based real-time etch process control algorithm is developed and successfully implemented on the basis of the above noted input - output relation derived from the experimental data base.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 502: Symposium II – In Situ Process Diagnostics & Intelligent Materials Processing , 1997 , 71
Copyright
Copyright © Materials Research Society 1998

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References

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