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Reactive Ion Etching (RIE) Induced p- to n-Type Conversion in Extrinsically Doped p-Type HgCdTe

Published online by Cambridge University Press:  10 February 2011

C. A. Musca ,
E. P. G. Smith ,
J. F. Siliquini ,
J. M. Dell ,
J. Antoszewski ,
J. Piotrowski  and
L. Faraone
C. A. Musca
Affiliation:
Department of Electrical and Electronic Engineering, The University of Western Australia, Nedlands, WA, 6907, Australia, charlie@ee.uwa.edu.au
E. P. G. Smith
Affiliation:
Department of Electrical and Electronic Engineering, The University of Western Australia, Nedlands, WA, 6907, Australia, charlie@ee.uwa.edu.au
J. F. Siliquini
Affiliation:
Department of Electrical and Electronic Engineering, The University of Western Australia, Nedlands, WA, 6907, Australia, charlie@ee.uwa.edu.au
J. M. Dell
Affiliation:
Department of Electrical and Electronic Engineering, The University of Western Australia, Nedlands, WA, 6907, Australia, charlie@ee.uwa.edu.au
J. Antoszewski
Affiliation:
Department of Electrical and Electronic Engineering, The University of Western Australia, Nedlands, WA, 6907, Australia, charlie@ee.uwa.edu.au
J. Piotrowski
Affiliation:
Vigo System Ltd., HERY 23, 01-494, Warsaw, Poland
L. Faraone
Affiliation:
Department of Electrical and Electronic Engineering, The University of Western Australia, Nedlands, WA, 6907, Australia, charlie@ee.uwa.edu.au
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Abstract

Mercury annealing of reactive ion etching (RIE) induced p- to n-type conversion in extrinsically doped p-type epitaxial layers of HgCdTe (x=0.3 1) has been used to reconvert n-type conversion sustained during RIE processing. For the RIE processing conditions used (400mT, CH4/H2, 90 W) p- to n-type conversion was observed using laser beam induced current (LBIC) measurements. After a sealed tube mercury anneal at 200°C for 17 hours, LBIC measurements clearly indicated no n-type converted region remained. Subsequent Hall measurements confirmed that the material consisted of a p-type layer, with electrical properties equivalent to that of the initial as-grown wafer (NA-ND=2×1016 cm−3,.=350 cm2.V−1. S−1).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 353
Copyright
Copyright © Materials Research Society 1998

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