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Reactive Ion Etching of GaSb, (Ai,Ga)Sb, and InAs for Novel Device Applications.

Published online by Cambridge University Press:  25 February 2011

D.C. La Tulipe ,
D.J. Frank  and
H. Munekata
D.C. La Tulipe
Affiliation:
IBM Research Division, T.J.Watson Research Center P.O. Box 218, Yorktown Heights, NY. 10598
D.J. Frank
Affiliation:
IBM Research Division, T.J.Watson Research Center P.O. Box 218, Yorktown Heights, NY. 10598
H. Munekata
Affiliation:
IBM Research Division, T.J.Watson Research Center P.O. Box 218, Yorktown Heights, NY. 10598
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Abstract

-Although a variety of novel device proposals for GaSb/(Al,Ga)Sb/InAs heterostructures have been made, relatively little is known about processing these materials. We have studied the reactive ion etching characteristics of GaSb, (AI,Ga)Sb, and InAs in both methane/ hydrogen and chlorine gas chemistries. At conditions similar to those reported elsewhere for RIE of InP and GaAs in CH4/H2, the etch rate of (AI,Ga)Sb was found to be near zero, while GaSb and InAs etched at 200Å/minute. Under conditions where the etch mechanism is primarily physical sputtering, the three compounds etch at similar rates. Etching in Cl2 was found to yield anisotropic profiles, with the etch rate of (AI,Ga)Sb increasing with Al mole fraction, while InAs remains unetched. Damage to an InAs “stop layer” was investigated by sheet resistance and mobility measurements. These etching techniques were used to fabricate a novel InAs-channel FET composed of these materials. Several scanning electron micrographs of etching results are shown along with preliminary electrical characteristics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 251
Copyright
Copyright © Materials Research Society 1991

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