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Reactive ION Beam Etching of GaN Grown By Movpe

Published online by Cambridge University Press:  10 February 2011

K. Saotome ,
A. Matsutani ,
T. Shirasawa ,
M. Mori ,
T. Honda ,
T. Sakaguchi ,
F. Koyama  and
K. Iga
K. Saotome
Affiliation:
Precision and Intelligence Laboratory, Tokyo Institute of Technology 4259 Nagatsuta, Midori-ku, Yokohama 226, Japan
A. Matsutani
Affiliation:
Precision and Intelligence Laboratory, Tokyo Institute of Technology 4259 Nagatsuta, Midori-ku, Yokohama 226, Japan
T. Shirasawa
Affiliation:
Precision and Intelligence Laboratory, Tokyo Institute of Technology 4259 Nagatsuta, Midori-ku, Yokohama 226, Japan
M. Mori
Affiliation:
Precision and Intelligence Laboratory, Tokyo Institute of Technology 4259 Nagatsuta, Midori-ku, Yokohama 226, Japan
T. Honda
Affiliation:
Precision and Intelligence Laboratory, Tokyo Institute of Technology 4259 Nagatsuta, Midori-ku, Yokohama 226, Japan
T. Sakaguchi
Affiliation:
Precision and Intelligence Laboratory, Tokyo Institute of Technology 4259 Nagatsuta, Midori-ku, Yokohama 226, Japan
F. Koyama
Affiliation:
Precision and Intelligence Laboratory, Tokyo Institute of Technology 4259 Nagatsuta, Midori-ku, Yokohama 226, Japan
K. Iga
Affiliation:
Precision and Intelligence Laboratory, Tokyo Institute of Technology 4259 Nagatsuta, Midori-ku, Yokohama 226, Japan
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Abstract

A dry etch technique using Cl2 based reactive ion beam etching (RIBE) has been developd for GaN-based semiconductor lasers. The etching rate of 350 − 1000 Å/min was obtained. This is applicable for micro fabrication of GaN based materials in the same way as used for other III-V group semiconductors. Furthermore, it is found that the surface damage of GaN layers induced by the RIBE-etch can be removed using ultra-violet assisted wet-etching using alkali solution. The PL intensity of damaged GaN layers is increased after the post-process wet-etching.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 1029
Copyright
Copyright © Materials Research Society 1997

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References

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