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Reactions in Omcvd: Detection of Gas Phase Radicals In Gaas Deposition Under Single Gas-Surface Collision Conditions

Published online by Cambridge University Press:  26 February 2011

D.W. Squire ,
C.S. Dulcey  and
M.C. Lin
D.W. Squire
Affiliation:
Geo-Centers, Inc., Ft. Washington MD 20744
C.S. Dulcey
Affiliation:
Geo-Centers, Inc., Ft. Washington MD 20744
M.C. Lin
Affiliation:
Chemistry Division, Code 6105, Naval Research Laboratory, Washington DC 20375-5000
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Abstract

Laser ionization mass spectrometry has been used to study the deposition of gallium from trimethylgallium with and without AsH3. The apparent Arrhenius activation energy for the production of gas-phase methyl radicals from trimethylgallium is measured to be 28 ± 2 kcal/mol in the presence of AsH3, about the same value as measured in the absence of AsH3. At a substrate temperature of 1150 K where gallium desorption is substantial, addition of AsH3 is found to increase methyl radical yield but drastically decrease gallium atom desorption. A mechanism is presented to describe the deposition of GaAs at low pressures under single gas-surface collision conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 101: Symposium B – Laser and Particle-Beam Chemical Processing for Microelectronics , 1987 , 301
Copyright
Copyright © Materials Research Society 1998

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References

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