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Reaction Processing and Properties of Sic-To-Sic Joints

Published online by Cambridge University Press:  15 February 2011

B. H. Rabin  and
G. A. Moore
B. H. Rabin
Affiliation:
Idaho National Engineering Laboratory, P.O. Box 1625, Idaho Falls, ID 83415-2218
G. A. Moore
Affiliation:
Idaho National Engineering Laboratory, P.O. Box 1625, Idaho Falls, ID 83415-2218
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Abstract

Reaction processing methods have been developed for fabricating SiC-to-SiC joints that can be used in elevated temperature applications. Processing steps include tape casting thin sheet SiC+C interlayer precursors, clamping the tape between the ceramic parts, providing a source of Si adjacent to the joint, and heating above the melting point of Si in argon. Molten Si infiltrates the tape via capillary action forming a reaction bonded silicon carbide (RBSC) interlayer and simultaneously joining the ceramic parts. Four-point bending strength and fracture toughness of joined pressureless sintered α-SiC test specimens have been evaluated at room and elevated temperatures. At low temperatures the joint mechanical properties were comparable to those reported for bulk SiC, while at elevated temperatures the joint properties were characteristic of the RBSC interlayer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 314: Symposium R – Joining and Adhesion of Advanced Inorganic Materials , 1993 , 197
Copyright
Copyright © Materials Research Society 1993

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