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The Reaction of NH3 With TiN: Implications for CVD

Published online by Cambridge University Press:  10 February 2011

Michelle T. Schulberg
Affiliation:
Sandia National Laboratories, Livermore, CA 94551-0969
Mark D. Allendorf
Affiliation:
Sandia National Laboratories, Livermore, CA 94551-0969
Duane A. Outka
Affiliation:
Sandia National Laboratories, Livermore, CA 94551-0969
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Abstract

Since NH3 is an important component of TiN chemical vapor deposition (CVD) processes, understanding the NH3/TiN surface interaction is crucial to developing a model for the overall reaction. Temperature programmed desorption experiments show that NH3 adsorbs molecularly on amorphous TiN surfaces. Chemisorption occurs at only ∼5% of the surface sites, with an activation energy for desorption of 24 kcal/mol. The sticking probability into this state is 0.06 at 100 K. In addition, NH3 adsorbs with high probability into a multilayer state with an activation energy for desorption of 7.3 kcal/mol, similar to that found in other systems. NH3 does not dissociate on TiN. Under CVD conditions, however, the reactivity of NH3 on TiN may increase and surface reactions may play a part in film growth.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

1. Fix, R. M., Gordon, R. G., and Hoffman, D. M., Chem. Mater. 2, p. 235 (1990).Google Scholar
2. Fix, R. M., Gordon, R. G., and Hoffman, D. M., Mat. Res. Soc. Symp. Proc. 168, p. 357 (1990).Google Scholar
3. Prybyla, J. A., Chiang, C.-M., and Dubois, L. H., J. Electrochem. Soc. 140, p. 2695 (1993).Google Scholar
4. Dubois, L. H., Polyhedron 13, p. 1329 (1994).Google Scholar
5. Truong, C. M., Chen, P. J., Corneille, J. S., Oh, W. S., and Goodman, D. W., J. Phys. Chem. 99, p. 8831 (1995).Google Scholar
6. See, for example: Dresser, M. J., Taylor, P. A., Wallace, R. M., Choyke, W. J., and Yates, J. T., Jr., Surf. Sci. 218, p. 75 (1989).Google Scholar
7. See, for example: Fisher, G. B., Chem. Phys. Lett. 79, p. 452 (1981).Google Scholar
8. Schulberg, M. T., Allendorf, M. D., and Outka, D. A., Surf Sci. 341-3, p. 262 (1995).Google Scholar
9. Davis, L. E., MacDonald, N. C., Palmberg, P. W., Riach, G. E., and Weber, R. E., Handbook of Auger Electron Spectroscopy, 2nd ed. (Physical Electronics Division, Perkin Elmer Corporation, Eden Prairie, MN, 1976).Google Scholar
10. Redhead, P. A., Vacuum 12, p. 203 (1962).Google Scholar
11. Allendorf, M. D. and Outka, D. A., Surf. Sci. 258, p. 177 (1991).Google Scholar
12. Román, E. and Segovia, J. L. de, Surf Sci. 251/252, p. 742 (1991).Google Scholar
13. Lee, H. J., Choi, J.-G., Coiling, C. W., Mudholkar, M. S., and Thompson, L. T., Appl. Surf. Sci. 89, p. 121 (1995).Google Scholar
14. Gland, J. L. and Kollin, E. B., J. Vac. Sci. Technol. 18, p. 604 (1981).Google Scholar
15. Wu, M.-C., Truong, C. M., and Goodman, D. W., J. Phys. Chem. 97, p. 4182 (1993).Google Scholar
16. Allendorf, M. D., Janssen, C. L., Colvin, M. E., Melius, C. F., Nielsen, I. M. B., Osterheld, T. H., and Ho, P., to appear in Process Control, Diagnostics, and Modeling in Semiconductor Manufacturing, The Electrochemical Society (1996).Google Scholar
17. Outka, D. A., Schulberg, M. T., and Allendorf, M. D., unpublished results.Google Scholar
18. McMillen, D. F. and Golden, D. M., Ann. Rev. Phys. Chem. 33, p. 493 (1982).Google Scholar
19. Benndorf, C. and Madey, T. E., Surf. Sci. 135, p. 164 (1983).Google Scholar
20. Repulsive interactions could be significant at low coverages if the adsorption sites are clustered.Google Scholar
21. Larson, R. S. and Allendorf, M. D., submitted to CVD-XIII, Proc. of the Thirteenth Intl. Conf on Chemical Vapor Deposition (The Electrochemical Society, Pennington, NJ).Google Scholar