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RBS/Chainneling and Ten Analysis of Heteroepitaxial Ge Films on GaAs Crown by Remote Plasma Enhanced Chemical Vapor Deposition

Published online by Cambridge University Press:  26 February 2011

N.R. Parikh ,
F V Hattangady ,
J.B. Posthill ,
M.L. King ,
R.A. Rudder ,
D.J. Vitkavage ,
R.J. Markunas  and
W.K. Chu
N.R. Parikh
Affiliation:
Dept. of Physics & Astronomy, U. North Carolina, Chapel Hill, NC 27514
F V Hattangady
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709.
J.B. Posthill
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7907
M.L. King
Affiliation:
Dept. of Physics & Astronomy, U. North Carolina, Chapel Hill, NC 27514
R.A. Rudder
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709.
D.J. Vitkavage
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709.
R.J. Markunas
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709.
W.K. Chu
Affiliation:
Dept. of Physics & Astronomy, U. North Carolina, Chapel Hill, NC 27514
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Abstract

We have deposited thin Ge films on GaAs(111) crystals over a temperature range of 250-400° C by Remote Plasma Enhanced Chemical Vapor Deposition (RPECVD). Rutherford Backscattering (RBS)/channelinf analysis of these heteroepitaxial films were carried out using 2.07 MeV He ions channeled along the <111> axis. RBS/channeling analysis showed that the best Ce films were grown at a substrate temperature of 300° C. The minimum yield for <111> channeling on films deposited at 300° C was 0.08, slightly greater than that of the GaAs crystal. Films grown at temperatures below 300° C showed poor epitaxy. No channeling was observed for the film grown at 250° C. Films grown at substrate temperatures above 350° C showed high dechanneling near the interface and poor epitaxy indicating films are highly defective. The RBS/channeling results are correlated with microstructural characterization using transmission electron microscopy of these films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 275
Copyright
Copyright © Materials Research Society 1988

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References

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