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Rare-Earth Doped Epitaxial InGaP and its Optical Properties

Published online by Cambridge University Press:  10 February 2011

B. W. Wessels
B. W. Wessels*
Affiliation:
Dept. of Materials Science and Engineering and the Materials Research Center, Northwestern University, Evanston, Ill. USA
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Abstract

The optical properties of rare-earth impurities in InGaP and the factors which influence their luminescence efficency are presented. Basic energy transfer processes are described. Practical devices that utilize characteristic rare-earth luminescence are reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 422: Symposium D – Rare-Earth Doped Semiconductors II , 1996 , 247
Copyright
Copyright © Materials Research Society 1996

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References

1. Bell, R., J. Appl. Phys. 12 1563 (1963)Google Scholar
2. Masterov, V. F., Semiconductors 27 791 (1993) and references therein.Google Scholar
3. Neuhalfen, A. J. and Wessels, B. W., Appl. Phys. Lett. 59 2317 (1991).Google Scholar
4. Neuhalfen, A. J. and Wessels, B. W., Materials Science Forum 83–87 689 (1992).Google Scholar
5. Neuhalfen, A. J. and Wessels, B. W., MRS Proc. 240 195 (1992).Google Scholar
6. Wang, X. Z. and Wessels, B. W., Materials Science Forum 196–201 663 (1995).Google Scholar
7. Takahei, K. and Taguchi, A. J. Appl. Phys. 74 1979 (1993).Google Scholar
8. Langer and Le Van Hong, J., J. Phys. C. 17 L923 (1984).Google Scholar
9. Wang, X. Z. and Wessels, B. W., Materials Science Forum 196–201 657 (1995).Google Scholar
10. Wang, X. Z. and Wessels, B. W., Appl. Phys. Lett. 65 84 (1994).Google Scholar
11. Ford, G. and Wessels, B. W., Appl. Phys. Lett. 68 1126 (1996)Google Scholar
12. Chu, D. et al. Appl. Phys. Lett. 66 2843 (1995).Google Scholar
13. Ford, G. and Wessels, B. W., (MRS Proc. 1996) Symposium D.Google Scholar