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Rare Earth Ion Implantation for Silicon Based Light Emission: From Infrared to Ultraviolet

Published online by Cambridge University Press:  01 February 2011

W. Skorupa ,
J. M. Sun ,
S. Prucnal ,
L. Rebohle ,
T. Gebel ,
A.N. Nazarov ,
I.N. Osiyuk ,
T. Dekorsy  and
M. Helm
W. Skorupa
Affiliation:
Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research, POB 510119, D-01314 Dresden, Germany nanoparc GmbH, Dresden - Rossendorf, Germany
J. M. Sun
Affiliation:
Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research, POB 510119, D-01314 Dresden, Germany
S. Prucnal
Affiliation:
Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research, POB 510119, D-01314 Dresden, Germany
L. Rebohle
Affiliation:
nanoparc GmbH, Dresden - Rossendorf, Germany
T. Gebel
Affiliation:
nanoparc GmbH, Dresden - Rossendorf, Germany
A.N. Nazarov
Affiliation:
Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kyiv, Ukraine corresponding author: w.skorupa@fz-rossendorf.de
I.N. Osiyuk
Affiliation:
Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kyiv, Ukraine corresponding author: w.skorupa@fz-rossendorf.de
T. Dekorsy
Affiliation:
Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research, POB 510119, D-01314 Dresden, Germany
M. Helm
Affiliation:
Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research, POB 510119, D-01314 Dresden, Germany nanoparc GmbH, Dresden - Rossendorf, Germany
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Abstract

Using ion implantation different rare earth luminescent centers (Gd3+, Tb3+, Eu3+, Ce3+, Tm3+, Er3+) were incorporated into the silicon dioxide layer of a purpose-designed Metal Oxide Silicon (MOS) capacitor with advanced electrical performance, further called a MOS-light emitting device (MOSLED). The silicon dioxide layer did not contain silicon nanoclusters. Efficient electroluminescence was obtained from UV to infrared with a transparent top electrode made of indium-tin oxide. The electroluminescence properties were studied with respect to the luminescence spectra, decay time, impact excitation, cross relaxation (Tb3+), and power efficiency. Top values of the efficiency of 0.3 % corresponding to external quantum efficiencies well above the percent range were reached. The electrical properties of these devices such as current-voltage and charge trapping characteristics, were also evaluated. Moreover, we demonstrate photo- and electroluminescence in correlation to charge trapping characteristics for Er-rich MOSLEDs with a varying silicon cluster content. Finally, application aspects to the field of biosensing will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 866 , 2005 , V4.1/FF4.1
Copyright
Copyright © Materials Research Society 2005

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References

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