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Rapid Thermal Annealing of Titanium in an Ammonia Ambient: Kinetics and Film Properties

Published online by Cambridge University Press:  28 February 2011

K. Srikrishna ,
R. Jairath  and
G. Huglin
K. Srikrishna
Affiliation:
Technology Development, National Semiconductor Corporation, Santa Clara CA 95051.
R. Jairath
Affiliation:
Technology Development, National Semiconductor Corporation, Santa Clara CA 95051.
G. Huglin
Affiliation:
Technology Development, National Semiconductor Corporation, Santa Clara CA 95051.
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Abstract

The reaction between titanium and ammonia to form titanium nitride in a rapid thermal annealer has been studied as a function of process temperature and substrate conditions. The films produced have been characterized by Rutherford Backscattering, Sputtered Neutral Mass Spectroscopy and four point probe electrical resistivity measurements. On oxide substrates, below 720°C only dissolution of nitrogen within the titanium is observed leading to an increase in the specific resistance of the film. Above 720°C, stoichiometric titanium nitride begins forming leading to a drop in the specific resistance of the film. Only in the vicinity of 800°C is all the titanium consumed to form TiN. However, temperatures beyond 700°C cause dissolution of oxygen within the titanium. On silicon substrates, the competing reactions of nitridation and silicidation at the two interfaces govern the extent of nitridation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 224: Symposium F – Rapid Thermal and Integrated Processing I , 1991 , 123
Copyright
Copyright © Materials Research Society 1991

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