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Rapid Thermal Annealing of Si-Implanted GaAs

Published online by Cambridge University Press:  22 February 2011

D.H. Rosenblatt ,
W.R. Hitchens ,
S. Shatas ,
A. Gat  and
D.A. Betts
D.H. Rosenblatt
Affiliation:
Watkins-Johnson Co., Palo Alto, CA 94304;
W.R. Hitchens
Affiliation:
Watkins-Johnson Co., Palo Alto, CA 94304;
S. Shatas
Affiliation:
AG Associates, Palo Alto, CA 94303;
A. Gat
Affiliation:
AG Associates, Palo Alto, CA 94303;
D.A. Betts
Affiliation:
Charles Evans and Associates, San Mateo, CA 94402
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Abstract

Heatpulse rapid thermal annealing was used to activate Si implants of 3.5 × 1012cm−2 at 100 keV and 1.0 × 1013 and 1.0 × 1014cm−2 at 200 keV into semi-insulating GaAs. The effects of Si3N4 encapsulation, anneal temperature and time, and substrate Cr-doping level were investigated. The annealed samples were characterized with C-V, Van der Pauw, differential Hall, and SIMS measurements. Conventional furnace anneals were carried out for comparison, and in all cases, Heatpulse anneals produced sharper carrier concentration profiles. 84% electrical activation was obtained for the 200 keV, 1.0 × 1013 cm−2 implant after a 950°C, 5 sec. Heatpulse anneal. Capped Heatpulse anneals produced less Cr depletion from the implanted region than furnace anneals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 669
Copyright
Copyright © Materials Research Society 1984

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References

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