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Rapid Thermal Annealing for Residual-Stress Relaxation in Undoped or Doped Polysilicon Thin Films

Published online by Cambridge University Press:  10 February 2011

Xin Zhang ,
Tong-Yi Zhang  and
Yitshak Zohar
Xin Zhang
Affiliation:
Department of Mechanical Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, 852-2358-1543
Tong-Yi Zhang
Affiliation:
Department of Mechanical Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, 852-2358-1543
Yitshak Zohar
Affiliation:
Department of Mechanical Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, 852-2358-1543
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Abstract

The residual stress in doped and undoped polysilicon films, before and after rapid thermal annealing (RTA), is investigated using both wafer-curvature and micro-rotating structures techniques. Microstructure characterization has been conducted as well to understand the mechanism of the stress evolution. The results show that the compressive residual stresses in undoped polysilicon films can be reduced or eliminated within a few seconds RTA. Surface nitridation and grain growth are identified as the mechanisms responsible for the stress evolution.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 546: Symposium AA – Materials Science of Microelectromechanical Systems (MEMS)… , 1998 , 27
Copyright
Copyright © Materials Research Society 1999

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