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Rapid Annealing of Implant Damage Using Thermal Radiation

Published online by Cambridge University Press:  15 February 2011

R. T. Fulks ,
C. J. Russo ,
D. F. Downey ,
P. R. Hanley  and
W. T. Stacy
R. T. Fulks
Affiliation:
Varian Associates, Inc., Corporate Solid State Laboratory, Palo Alto, CA 94303
C. J. Russo
Affiliation:
Varian Associates, Inc., Extrion Division, Gloucester, MA 01930
D. F. Downey
Affiliation:
Varian Associates, Inc., Extrion Division, Gloucester, MA 01930
P. R. Hanley
Affiliation:
Varian Associates, Inc., Extrion Division, Gloucester, MA 01930
W. T. Stacy
Affiliation:
Philips Research Laboratories, Signetics Corp., Sunnyvale, CA 94086
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Abstract

The rapid annealing of implant damage using thermal radiation has been shown to be a production-worthy method of achieving good activation and minimal dopant redistribution of implanted species. The method involves the shuttered exposure of a standard 3" or 4" silicon wafer to a uniform thermal radiation front produced by a graphite heater for short times (10–30 sec). The propagation of residual damage observed by TEM is significantly less than that produced by furnace annealing and device structures annealed have electrical characteristics comparable to standard furnace anneals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 7 , 1981 , 395
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

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