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Random Telegraph Noise in Individual Single-walled Carbon Nanotubes

Published online by Cambridge University Press:  01 February 2011

SungHo Jhang ,
SangWook Lee ,
DongSu Lee ,
Eleanor E. B. Campbell ,
Siegmar Roth  and
YungWoo Park
SungHo Jhang
Affiliation:
School of Physics, Seoul National University, Seoul, 151–747, Korea
SangWook Lee
Affiliation:
School of Physics, Seoul National University, Seoul, 151–747, Korea
DongSu Lee
Affiliation:
School of Physics, Seoul National University, Seoul, 151–747, Korea
Eleanor E. B. Campbell
Affiliation:
Department of Experimental Physics, Gothenburg University and Chalmers University of Technology, SE-412 96 Gothenburg, Sweden
Siegmar Roth
Affiliation:
Max-Planck Institute for Solid State Research, D-70569 Stuttgart, Germany
YungWoo Park
Affiliation:
School of Physics, Seoul National University, Seoul, 151–747, Korea
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Abstract

The switching of resistance between two discrete values, known as random telegraph noise (RTN), was observed in individual single-walled carbon nanotubes (SWNTs). The RTN has been studied as a function of bias-voltage and gate-voltage as well as temperature. By analyzing the features of the RTN, we identify three different types of RTN existing in the SWNT related systems. While the RTN can be generated by the various charge traps in the vicinity of the SWNTs, the RTN for metallic SWNTs is mainly due to reversible defect motions between two metastable states, activated by inelastic scattering with electrons.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 858: Symposium HH – Functional Carbon Nanotubes , 2004 , HH8.5
Copyright
Copyright © Materials Research Society 2005

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