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Raman Studies of Microstructural Changes in Amorphous Silicon-Boron Alloys Due to Annealing

Published online by Cambridge University Press:  21 February 2011

G. Yang ,
P. Bai ,
Y.-J Wu ,
B. Y. Tong ,
S. K. Wong ,
J. Du  and
I. Hill
G. Yang
Affiliation:
Center for Integrated Electronics and Physics Department, Rensselaer Polytechnic Institute, Troy, NY 12180, USA
P. Bai
Affiliation:
Center for Integrated Electronics and Physics Department, Rensselaer Polytechnic Institute, Troy, NY 12180, USA
Y.-J Wu
Affiliation:
Center for Integrated Electronics and Physics Department, Rensselaer Polytechnic Institute, Troy, NY 12180, USA
B. Y. Tong
Affiliation:
Center of Chemical Physics; Surface Science Laboratory, University of Western Ontario, London, Ontario, Canada
S. K. Wong
Affiliation:
Center of Chemical Physics; Surface Science Laboratory, University of Western Ontario, London, Ontario, Canada
J. Du
Affiliation:
Center of Chemical Physics; Surface Science Laboratory, University of Western Ontario, London, Ontario, Canada
I. Hill
Affiliation:
Surface Science Laboratory, University of Western Ontario, London, Ontario, Canada
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Abstract

Crystallization of amorphous Sil−x.Bx alloy films by annealing is studied. Amorphous Sil−xBx. alloy films with composition of boron x ranging from 0.01 to 0.5 are deposited on Si substrates at a temperature of 480° in a low pressure chemical vapor deposition (LPCVD) system. Three films with the boron contents, 1%, 7% and 45%, are used in this study. The films are annealed in a nitrogen ambient for 30 minutes at temperatures between 600°C and 900°C. Raman spectra of the silicon vibrational mode serve as a indicator for the microstructure of the Sil−xBx, alloy films. Quantitative estimates of the volume fraction of the crystalline silicon component in respect to the amorphous silicon component in the films are calculated based on the silicon TO mode. The results show that while for the film with the boron content of 1% crystallization occurs at the annealing temperature of 500°C, the annealing temperature of 7000C is required to observe crystallization in the films with the boron contents of 7% and 45%. As the annealing temperature increases, the volume fraction of the crystalline component increases. For a given annealing temperature, the rate of crystallization depends inversely on the boron content in the films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 164: Symposium H – Materials Issues in Microcrystalline Semiconductors , 1989 , 321
Copyright
Copyright © Materials Research Society 1990

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