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Raman Scattering from Rapid Thermally Annealed Tungsten Silicide

Published online by Cambridge University Press:  28 February 2011

Samhita Dasgupta Samhita Dasgupta ,
Sandeep Kumar ,
Howard E. Jackson  and
Joseph T. Boyd
Samhita Dasgupta Samhita Dasgupta
Affiliation:
Dept. of Physics, University of Cincinnati, Cincinnati, Ohio 45221 Dept. of Elec. Engg Comp. Sc., University of California, San Diego, La Jolla, CA 92093
Sandeep Kumar
Affiliation:
Microelectronics Device Research Laboratory, Dept. of Elec. & Comp. Engg, University of Cincinnati, Cincinnati, Ohio 45221
Howard E. Jackson
Affiliation:
Dept. of Physics, University of Cincinnati, Cincinnati, Ohio 45221
Joseph T. Boyd
Affiliation:
Microelectronics Device Research Laboratory, Dept. of Elec. & Comp. Engg, University of Cincinnati, Cincinnati, Ohio 45221
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Abstract

Raman Scattering as a technique for studying the formation of tungsten silicide is presented. The tungsten silicide films were formed by rapid thermally annealing tungsten films that were sputter deposited on silicon substrates. The Raman scattering data is correlated with data from resistivity measurements, Auger and Rutherford Backscattering measurements, and scanning electron microscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 213
Copyright
Copyright © Materials Research Society 1987

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References

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