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Raman Scattering and Photoemission from Bi Clusters

Published online by Cambridge University Press:  28 February 2011

M. G. Mitch ,
S. J. Chase ,
R. Q. Yu ,
J. Fortner  and
J. S. Lannin
M. G. Mitch
Affiliation:
Department of Physics, Penn State University, University Park, PA
S. J. Chase
Affiliation:
Department of Physics, Penn State University, University Park, PA
R. Q. Yu
Affiliation:
Department of Physics, Penn State University, University Park, PA
J. Fortner
Affiliation:
Argonne National Laboratory, Argonne, IL
J. S. Lannin
Affiliation:
Department of Physics, Penn State University, University Park, PA
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Abstract

Raman scattering measurements of Bi clusters formed on disordered C films at 110K exhibit a phase transformation from nanocrystalline rhombohedral structure to a suggested disordered phase. XPS measurements on this phase indicate core level shifts attributed to intrinsic, initial state effects on cluster electronic states.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 206: Symposium G – Clusters and Cluster-Assembled Materials , 1990 , 49
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

[1] Apai, G., Lee, S.T. and Mason, M.G., Solid State Commun. 37, 213 (1981).Google Scholar
[2] Martin, T. P., Proc. Intern Conf. Clusters, Konstanz, 1990 (to be published).Google Scholar
[3] Nemanich, R.J., Solin, S.A. and Martin, R.M., Phys. Rev. B23, 6348 (1981).Google Scholar
[4] Zitter, R.N. in The Physics of Semimetals and Narrow Gap Semiconductors, ed. Cater, D.L. and Bate, R.T. (Pergammon, New York, 1971), p. 285.Google Scholar
[5] Lannin, J.S., Phys. Rev. B12, 585 (1975).Google Scholar
[6] Fujime, S., Japan. J. Appl. Phys. 5, 764 (1966).Google Scholar
[7] Chase, S. J., Mitch, M.G., Yu, R.Q. and Lannin, J.S. (unpublished).Google Scholar
[8] Fortner, J., Yu, R.Q. and Lannin, J.S., J. Non-Cryst. Solids, 114, 675 (1989).Google Scholar
[9] Yu, R.Q., Chase, S. J., Fortner, J. and Lannin, J.S. (these proceedings).Google Scholar
[10] Mason, M.G., Phys. Rev. B27, 748 (1983).Google Scholar
[11] Wertheim, G.K., Z. Phys. D12, 319 (1989), and references therein.Google Scholar
[12] Macfarlane, R. E., in Physics of Semimetals and Narrow Gap Semiconductors, ed. Carter, D.L. and Bate, R.T. (Pergamon, NY, 1971), p. 289.Google Scholar
[13] Lannin, J.S. in Semiconductors and Semimetals 21B, ed. Pankove, J.I. (Academic, NY, 1984), p. 159.Google Scholar
[14] Curl, R.F. and Smalley, R.E., Science, 242, 1017 (1988).Google Scholar
[15] Yu, R.Q., Fortner, J. and Lannin, J.S., J. Vac. Sci. Tech. A8, 3488 (1990).CrossRefGoogle Scholar
[16] Knorr, K. and Barth, N., J. Low Temp. Phys. 4, 469 (1971).Google Scholar