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Raman Characterization of InSb/GaAs Grown by Metalorganic Magnetron Sputtering

Published online by Cambridge University Press:  28 February 2011

Z. C. Feng ,
S. Perkowitz ,
T. S. Rao  and
J. B. Webb
Z. C. Feng
Affiliation:
Department of Physics, Emory University, Atlanta, GA 30322
S. Perkowitz
Affiliation:
Department of Physics, Emory University, Atlanta, GA 30322
T. S. Rao
Affiliation:
Laboratory for Microstructural Science, National Research Council, 100 Sussex Drive, Ottawa K1A OR6, Canada
J. B. Webb
Affiliation:
Laboratory for Microstructural Science, National Research Council, 100 Sussex Drive, Ottawa K1A OR6, Canada
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Abstract

The new technique of metalorganic magnetron sputtering (MOMS) produces high-quality (100) epitaxial InSb films on (100) GaAs substrates, despite the large 14.6% lattice mismatch between InSb and GaAs. We have used Raman scattering to examine MOMS-grown InSb films of thicknesses 0.17 - 2.67 µm, and commercial bulk InSb. We observe the longitudinal optical (LO) phonon peak, and the second order 2LO peak, which is enhanced by outgoing resonance with the E1 + Δ1, gap of InSb. The half-widths and intensities of these bands are related to sample quality as a function of film thickness and to the role of biaxial stress in the InSb film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 739
Copyright
Copyright © Materials Research Society 1990

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