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Raman Characterization of AlGaAs Superlattice Channel Waveguide Structure formed by CIB and FIB Implantation

Published online by Cambridge University Press:  26 February 2011

A. G. Choo ,
V. Gupta ,
H. E. Jackson ,
J. T. Boyd ,
A. J. Steckl ,
P. Chen ,
B. L. Weiss  and
R. D. Burnham
A. G. Choo
Affiliation:
University of Cincinnati, Cincinnati, OH 45221–0011
V. Gupta
Affiliation:
University of Cincinnati, Cincinnati, OH 45221–0011
H. E. Jackson
Affiliation:
University of Cincinnati, Cincinnati, OH 45221–0011
J. T. Boyd
Affiliation:
University of Cincinnati, Cincinnati, OH 45221–0011
A. J. Steckl
Affiliation:
University of Cincinnati, Cincinnati, OH 45221–0011
P. Chen
Affiliation:
University of Cincinnati, Cincinnati, OH 45221–0011
B. L. Weiss
Affiliation:
University of Cincinnati, Cincinnati, OH 45221–0011
R. D. Burnham
Affiliation:
Amoco Research Center, Naperville, Illinois 60566
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Abstract

Raman scattering has been used to characterize lattice damage and impurity-induced compositional disordering in AlGaAs superlattice suitable for optical waveguiding. The degree of damage induced by both conventional ion beam (CIB) implantation and focused ion beam (FIB) implantation is studied using a spatial correlation model to interpret the Raman spectra. FIB implantation is found to induce slightly more damage than CIB implantation for doses of 8×1013 cm−2 and 4×1014 cm−2. and significantly more damage with 2×1015 cm2 compared to CIB implantations of the same dose. Suitable FIB implantation and rapid thermal annealing (RTA) conditions which provide compositional mixing were determined using Raman and photoluminescence spectroscopy. Using these conditions, an optical channel waveguide in AlGaAs superlattice formed by FIB-induced compositional intermixing is demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 691
Copyright
Copyright © Materials Research Society 1992

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References

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