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Radioactive Isotopes In Photoluminescence Experiments: Identification Of Defect Levels

Published online by Cambridge University Press:  15 February 2011

R. Magerle
R. Magerle*
Affiliation:
Fakultät für Physik, Universität Konstanz, D-78434 Konstanz, Germany
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Abstract

The characteristic life-times of radioactive isotopes can be used to label and identify defect levels in semiconductors which can be detected by photoluminescence (PL). This technique is illustrated with three examples: ZnS doped with radioactive 65Zn by neutron irradiation and GaAs doped with radioactive 111In by ion implantation. Finally we report that doping GaAs with radioactive 71As which decays to stable 71Ga can be used to create GaAs antisites in GaAs in a controlled way and to identify their levels.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 3
Copyright
Copyright © Materials Research Society 1997

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