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Radiative Versus Nonradiative Decay Processes in Germanium Nanocrystals Probed by Time-resolved Photoluminescence Spectroscopy

Published online by Cambridge University Press:  01 February 2011

P. K. Giri ,
R. Kesavamoorthy ,
B. K. Panigrahi  and
K.G.M. Nair
P. K. Giri
Affiliation:
Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781039, India
R. Kesavamoorthy
Affiliation:
Materials Science Division, Indira Gandhi Center for Atomic Research, Kalpakkam 603102, India
B. K. Panigrahi
Affiliation:
Materials Science Division, Indira Gandhi Center for Atomic Research, Kalpakkam 603102, India
K.G.M. Nair
Affiliation:
Materials Science Division, Indira Gandhi Center for Atomic Research, Kalpakkam 603102, India
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Abstract

Ge nanocrystals (NCs) of diameter 4–13 nm are grown embedded in a thermally grown SiO2 layer by Ge ion implantation and subsequent annealing. Steady state and time-resolved photoluminescence (PL) studies are performed on these embedded Ge nanocrystals to understand the origin of the PL emission at room temperature. Steady state PL spectra show a broad peak consisting of a peak at ∼2.1 eV originating from Ge NCs and another peak at ∼2.3 eV arising from ion-beam induced defects in the Ge/SiO2 interface. Time-resolved PL studies reveal double exponential decay dynamics of the PL emission on the nanoseconds time scale. The faster component of the decay with large amplitude and having a time constant τ1∼3.1 ns is attributed to the nonradiative lifetime, since the time constant reduces with increasing defect density. The slower component with time constant τ2∼10 ns is attributed to radiative recombination at the Ge NCs. These results are in close agreement with the theoretically predicted radiative lifetime for small Ge NCs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 864: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices , 2005 , E4.36
Copyright
Copyright © Materials Research Society 2005

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