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Radiative Recombination Mechanisms in Porous Silicon

Published online by Cambridge University Press:  15 February 2011

S. Gardelis ,
B. Hamilton ,
R. A. Kubiak ,
T. E Whall  and
E. C. H. Parker
S. Gardelis
Affiliation:
University of Manchester Institute of Science and Technology, Dept. of Pure and Applied Physics, Manchester, U. K.;
B. Hamilton
Affiliation:
University of Manchester Institute of Science and Technology, Dept. of Pure and Applied Physics, Manchester, U. K.;
R. A. Kubiak
Affiliation:
Dept. of Physics, University of Warwick, Warwick, U. K.
T. E Whall
Affiliation:
Dept. of Physics, University of Warwick, Warwick, U. K.
E. C. H. Parker
Affiliation:
Dept. of Physics, University of Warwick, Warwick, U. K.
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Abstract

This paper attempts to address the question of the role played by dimensionality in the observed optical transitions of porus silicon and related material systems. The effect of the degree of porosity on the transition energies, line widths and thermal stability. In addition more subtle effects observed in the thermal behaviour of the spectra which may relate to carrier trapping in a random potential of an imperfect localised system are reported. Comparisons with the spectral behaviour which would be predicted by quantum scale confinement of electronic particles are made.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 256: Symposia AA – Light Emission from Silicon , 1991 , 149
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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