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Radiation Detection with Evaporated Csl(TI) Coupled to a-Si:H Photodiode Layers

Published online by Cambridge University Press:  21 February 2011

I. Fujieda
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd., Palo Alto, CA 94304
G. Cho
Affiliation:
Lawrence Berkeley Laboratory, 1 Cyclotron Rd, Berkeley, CA 94720
J. Drewery
Affiliation:
Lawrence Berkeley Laboratory, 1 Cyclotron Rd, Berkeley, CA 94720
T. Gee
Affiliation:
Lawrence Berkeley Laboratory, 1 Cyclotron Rd, Berkeley, CA 94720
T. Jing
Affiliation:
Lawrence Berkeley Laboratory, 1 Cyclotron Rd, Berkeley, CA 94720
S. N. Kaplan
Affiliation:
Lawrence Berkeley Laboratory, 1 Cyclotron Rd, Berkeley, CA 94720
V. Perez-Mendez
Affiliation:
Lawrence Berkeley Laboratory, 1 Cyclotron Rd, Berkeley, CA 94720
D. Wildermuth
Affiliation:
Lawrence Berkeley Laboratory, 1 Cyclotron Rd, Berkeley, CA 94720
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Abstract

Csl(TI) layers 100–1000 μm thick were evaporated on glass substrates from a crystal Csl(TI). When they were exposed to calibrated X-ray pulses, their scintillation properties were found to be comparable to those of a crystal Csl(TI). Single p particles from radioisotopes were successfully detected by these layers coupled to a crystalline Si photodiode. The light spread inside evaporated Csl(TI) was measured by an amorphous Si (a-Si:H) photodiode array coupled to evaporated Csl(TI) layers. Monolithic X-ray detectors were fabricated by evaporating Csl(TI) on a-Si:H photodiodes directly. The signal yield and noise of this prototype were 1.5×10+4 electrons/MeV and 3×10+4 electrons FWHM, respectively. Larger signal size and lower noise are expected by optimizing the photodiode design.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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References

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