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Quantum-Confined Stark Effect and Recombination Dynamics of Spatially Indirect Excitons in Mbe-Grown GaN-AlGaN Quantum Wells

Published online by Cambridge University Press:  15 February 2011

Pierre Lefebvre ,
Bernard Gil ,
Jacques Allègre ,
Henry Mathieu ,
Nicolas Grandjean ,
Mathieu Leroux ,
Jean Massies  and
Pierre Bigenwald
Pierre Lefebvre
Affiliation:
Groupe d'Etude des Semiconducteurs - CNRS - Université Montpellier II. Case Courrier 074. 34095 Montpellier Cedex 5, France.
Bernard Gil
Affiliation:
Groupe d'Etude des Semiconducteurs - CNRS - Université Montpellier II. Case Courrier 074. 34095 Montpellier Cedex 5, France.
Jacques Allègre
Affiliation:
Groupe d'Etude des Semiconducteurs - CNRS - Université Montpellier II. Case Courrier 074. 34095 Montpellier Cedex 5, France.
Henry Mathieu
Affiliation:
Groupe d'Etude des Semiconducteurs - CNRS - Université Montpellier II. Case Courrier 074. 34095 Montpellier Cedex 5, France.
Nicolas Grandjean
Affiliation:
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications - CNRS Rue B. Grégory. F-06560 Valbonne, France
Mathieu Leroux
Affiliation:
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications - CNRS Rue B. Grégory. F-06560 Valbonne, France
Jean Massies
Affiliation:
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications - CNRS Rue B. Grégory. F-06560 Valbonne, France
Pierre Bigenwald
Affiliation:
LPM - Université d'Avignon - 33, rue Pasteur. 84000 Avignon, France.
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Abstract

We analyze the low-temperature photoluminescence decay times, for a series of MBE-grown samples embedding GaN-AlGaN quantum wells. We investigate a variety of configurations in terms of well widths, barrier widths and overall strain states. We find that not only the wells but also the barriers are submitted to large built-in electric fields. In the case of narrow barriers (5 um), these fields favor the nonradiative escape of carriers from narrow wells into wider wells. When all wells have the same width, the field in such narrow barriers allow us to observe the recombination of long-lived “inter-well” excitons at energies close to those of the short-lived “intra-well” excitons. Our results also prove that the energies and the dynamics of excitonic recombinations depend on the parameters of the heterostructures in a complicated way, due to the interplay of piezoelectric and spontaneous polarizations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G3.69
Copyright
Copyright © Materials Research Society 1999

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