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Quantum Well Shape Modification in Quaternary Quantum Wells

Published online by Cambridge University Press:  26 February 2011

Emil S. Köteles ,
A. N. M. Masum Choudhury ,
A. Levy ,
B. Elman ,
P. Melman ,
M. A. Koza  and
R. Bhat
Emil S. Köteles
Affiliation:
GTE Laboratories Inc. Waltham, MA 02254
A. N. M. Masum Choudhury
Affiliation:
GTE Laboratories Inc. Waltham, MA 02254
A. Levy
Affiliation:
GTE Laboratories Inc. Waltham, MA 02254
B. Elman
Affiliation:
GTE Laboratories Inc. Waltham, MA 02254
P. Melman
Affiliation:
GTE Laboratories Inc. Waltham, MA 02254
M. A. Koza
Affiliation:
Bellcore, Red Bank, NJ 07701
R. Bhat
Affiliation:
Bellcore, Red Bank, NJ 07701
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Abstract

Quantum well interdiffusion has been employed, for the First time in the quaternary InGaAsP/InP system (grown lattice matched to InP substrates), in order to modify the as-grown, nominally square, shapes of single quantum wells so as to increase their bandgap energies. This was accomplished, in a spatially selective manner, by using low energy ion implantation through a mask to generate vacancies. Subsequent rapid thermal annealing drove these vacancies down to the quantum wells where their presence enhanced the thermally driven interdiffusion of atoms between the well and barrier layers. The goal of this work is to develop a simple process for the integration of optoelectronic devices with differing functions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 171
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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