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Quantum Effect Device Using Disordered Surface in Doped Si Near the Metal-Nonmetal Transition

Published online by Cambridge University Press:  26 February 2011

Y. Ochiai ,
R. Yoshizaki  and
E. Matsuura
Y. Ochiai
Affiliation:
Institute of Materials Science, University of Tsukuba, Sakura, Ibaraki305
R. Yoshizaki
Affiliation:
Institute of Applied Physics, University of Tsukuba, Sakura, Ibaraki305
E. Matsuura
Affiliation:
Institute of Physics, University of Tsukuba, Sakura, Ibaraki305, Japan
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Abstract

We have observed several steps in the I-V characteristics of nonmetallic Sb doped Si near the metal-nonmetal transition. The steps appear at equal intervals in the bias voltage of the low temperature I-V curve and the intervals in the voltage are independent on magnetic field. Such strongly nonlinear conduction can be explained by neither the Joshphson junction effect nor the Stark ladder effect. We have compared it with tunneling models in order to study a new application to a current or a voltage standard using quantum effect transport.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 645
Copyright
Copyright © Materials Research Society 1987

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