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Quantized Conductance and Neuromorphic Behavior of a Gapless-Type Ag-Ta2O5 Atomic Switch

Published online by Cambridge University Press:  06 June 2013

Tohru Tsuruoka ,
Tsuyoshi Hasegawa ,
Kazuya Terabe  and
Masakazu Aono
Tohru Tsuruoka
Affiliation:
International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, 305-0044, Japan. Core Research for Evolutional Science and Technology (CREST), Japan Science and Technology Agency (JST), Chiyoda-ku, 102-0075, Japan.
Tsuyoshi Hasegawa
Affiliation:
International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, 305-0044, Japan. Core Research for Evolutional Science and Technology (CREST), Japan Science and Technology Agency (JST), Chiyoda-ku, 102-0075, Japan.
Kazuya Terabe
Affiliation:
International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, 305-0044, Japan.
Masakazu Aono
Affiliation:
International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, 305-0044, Japan.
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Abstract

We investigated quantization behavior in conductance of an Ag/Ta2O5/Pt gapless-type atomic switch. Stepwise increases and decreases in the conductance were observed when small positive and negative bias voltages were applied to the Ag electrode, respectively, where each step corresponds to the conductance of a single atomic point contact. The conductance level could also be controlled by applying voltage pulses with varied amplitudes. Furthermore, when the interval time of consecutive input pulses was turned, we also observed long-term potentiation behavior similar to that of biological synapses. These results indicate that the oxide-based, gapless-type atomic switch has potential for use as a building block of neural computing systems.

Keywords

memoryoxidenanoscale
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1562: Symposium DD – Emerging Materials and Devices for Future Nonvolatile Memories , 2013 , mrss13-1562-dd14-13
Copyright
Copyright © Materials Research Society 2013 

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References

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