Hostname: page-component-848d4c4894-nmvwc Total loading time: 0 Render date: 2024-06-24T21:17:16.821Z Has data issue: false hasContentIssue false
  • English
  • Français

A Quantitative Analysis of Cermet Resistivity Data Using the General Effective Media (GEM) Equation

Published online by Cambridge University Press:  28 February 2011

David S. Mclachlan
David S. Mclachlan*
Affiliation:
Physics Department, University of the Witwatersrand, P O Wits 2050, Johannesburg, South Africa
Get access

Abstract

A General Effective Media (GEM) equation is used to quantitatively describe the resistivity of the W - Al203 and Ni - Si02 cermet systems as a function of the relative volume fractions. The two percolation morphology parameters (øc and t) characterise the microstructure. A constant resistivity pl is assumed for the metal (W or Ni) while, in some cases, it is necessary that the resistivity of the insulator be modeled as the tunneling of electrons, through an oxide barrier, from a thermally excited charged grain to a neutral grain.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 195: Symposium S – Physical Phenomena in Granular Materials , 1990 , 199
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Landauer, R., in Electrical Transport and Optical Properties of Inhomogeneous Media., pp 2., Edited by Garland, J.C. and Tanner, D.B., American Institute of Physics Conference Proceedings, No. 40 (1978).Google Scholar
2. Zallen, R., in The Physics of Amorphous Solids, Chapter 4, Wiley, New York (1983).Google Scholar
3. McLachlan, D. S., J. Phys. C20, 865 (1987).Google Scholar
4. Deprez, N., McLachlan, D. S. and Sigalas, I., Solid State Comm. 66, 869 (1988).Google Scholar
5. McLachlan, D. S., Japan J. Appl. Phys. 26, Suppl. 26–3, 901 (1987)Google Scholar
6. McLachlan, D. S., Solid State Comm. 69, 925 (1989).Google Scholar
7. Abeles, B., in Applied Solid State Science, Edited by Wolfe, R., Academic Press, New York, 1976, Vol. 6. pp 2.Google Scholar
8. Abeles, B., Pinch, H. L., and Gittleman, J. I., Phys. Rev. Lett. 35, 247 (1975).Google Scholar
9. Abeles, B., Sheng, P., Coutts, M. D. and Arie, Y., Adv. Phys. 24, 407 (1975).Google Scholar
10. Carmona, F, Conet, R. and Delhaus, P, J. Appl. Phys. 61, 2550 (1987).Google Scholar
11. Deprez, N and McLachlan, D. S., J. Phys.; Applied Phys. D21, 101 (1988).Google Scholar